N04L163WC1C - 4Mb Ultra-Low Power Asynchronous CMOS SRAM

NanoAmp Solutions

Datasheet Details

Part number	N04L163WC1C
Manufacturer	NanoAmp Solutions
File Size	292.79 KB
Description	4Mb Ultra-Low Power Asynchronous CMOS SRAM
Datasheet	N04L163WC1C Datasheet

Overview

NanoAmp Solutions, Inc.

1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com N04L163WC1C Advance www.DataSheet4U.com Information 4Mb Ultra-Low Power Asynchronous CMOS SRAM 256K × 16 bit Overview The N04L163WC1C is an integrated memory device containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits.

The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low power.

Key Features

Single Wide Power Supply Range 2.2 to 3.6 Volts.
Very low standby current 2.0µA at 3.0V (Typical).
Very low operating current 1.5mA at 3.0V and 1µs (Typical).
Simple memory control Single Chip Enable (CE) Byte control for independent byte operation Output Enable (OE) for memory expansion.
Low voltage data retention Vcc = 1.5V.
Very fast output enable access time 25ns OE access time.
Automatic power down to standby mode.
TTL.

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