N04L163WC1C - 4Mb Ultra-Low Power Asynchronous CMOS SRAM

NanoAmp Solutions

N04L163WC1C Datasheet Preview — Preview of N04L163WC1C PDF

Datasheet Details

Part number	N04L163WC1C
Manufacturer	NanoAmp Solutions
File Size	292.79 KB
Description	4Mb Ultra-Low Power Asynchronous CMOS SRAM
Datasheet	N04L163WC1C_NanoAmpSolutions.pdf

N04L163WC1C Product details

Description

1 A B C D E F G H LB I/O8 I/O9 VSS VCC 2 OE UB I/O10 I/O11 3 A0 A3 A5 A17 4 A1 A4 A6 A7 A16 A15 A13 A10 5 A2 CE I/O1 I/O3 I/O4 I/O5 WE A11 6 NC I/O0 I/O2 VCC VSS I/O6 I/O7 NC Pin Name A0-A17 WE CE OE LB UB I/O0-I/O15 VCC VSS NC DNU Pin Function Address Inputs Write Enable Input Chip Enable Input Output Enable Input Lower Byte Enable Input Upper Byte Enable Input Data Inputs/Outputs Power Ground Not Connected Do Not Use N04L163WC1C TSOP - II I/O12 DNU A14 A12 A9 I/O14 I/O13 I/O15 NC NC

Features

Single Wide Power Supply Range 2.2 to 3.6 Volts.
Very low standby current 2.0µA at 3.0V (Typical).
Very low operating current 1.5mA at 3.0V and 1µs (Typical).
Simple memory control Single Chip Enable (CE) Byte control for independent byte operation Output Enable (OE) for memory expansion.
Low voltage data retention Vcc = 1.5V.
Very fast output enable access time 25ns OE access time.
Automatic power down to standby mode.
TTL.

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